vishay general semiconductor b40c800dm thru b380c800dm document number 88533 09-oct-06 www.vishay.com 1 glass passivated ultrafast bridge rectifier features ? ul recognition, file number e54214 ? ideal for automated placement ? high surge current capability ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for smps, lighting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunicat ion applications. mechanical data case: dfm epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked on body case style dfm ~ ~ ~ ~ major ratings and characteristics i f(av) 0.9 a v rrm 65 v to 600 v i fsm 45 a i r 10 a v f 1.0 v t j max. 125 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol b40 c800dm b80 c800dm b125 c800dm b250 c800dm b380 c800dm unit maximum repetitive peak reverse voltage v rrm 65 125 200 400 600 v maximum rms input voltage r + c-load v rms 40 80 125 250 380 v maximum average forward output current for free air operation at t a = 45 c r + l-load c-load i f(av) 0.9 0.8 a maximum dc blocking voltage v dc 65 125 200 400 600 v maximum peak working voltage v rwm 90 180 300 600 900 v maximum non-repetitive peak voltage v rsm 100 200 350 650 1000 v maximum repetitive peak forward surge current i frm 10 a peak forward surge current single sine wave on rated load i fsm 45 a rating for fusing at t j = 125 c (t < 100 ms) i 2 t 10 a 2 sec minimum series resistor c-load at v rms = 10 % r t 1.0 2.0 4.0 8.0 12 maximum load capacitance + 50 % - 10 % c l 5000 2500 1000 500 200 f operating junction temperature range t j - 40 to + 125 c storage temperature range t stg - 40 to + 150 c
www.vishay.com 2 document number 88533 09-oct-06 vishay general semiconductor b40c800dm thru b380c800dm note: (1) thermal resistance from junction to am bient and from junction to lead mounted on p.c.b. with 0.5 x 0.5" (13 x 13 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol b40 c800dm b80 c800dm b125 c800dm b250 c800dm b380 c800dm unit maximum instantaneous forward voltage drop per diode at 0.9 a v f 1.0 v maximum reverse current at rated repetitive peak voltage per diode i r 10 a thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol b40 c800dm b80 c800dm b125 c800dm b250 c800dm b380 c800dm unit typical thermal resistance (1) r ja r jl 40 15 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode b38c800dm-e3/45 0.416 45 50 tube figure 1. derating curves output rectified current for b40c800d...b125c800dm 20 40 60 0.2 0.4 0.6 0. 8 1.0 8 0 100 120 140 0 0 0 - 10 f 10 - 100 f > 100 f capaciti v e load mo u nted on p.c.b. w ith 0.06 " (1.5 mm) lead length copper pads 0.51 x 0.51 " (13 x 13 mm) 50 to 60 hz resisti v e or ind u cti v e load am b ient temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) figure 2. derating curves output rectified current for b250c800d...b360c800dm 60 8 0 100 140 0 0.2 0.6 0. 8 1.0 0.4 0 20 40 120 capaciti v e load mo u nted on p.c.b. w ith 0.06 " (1.5 mm) lead length copper pads 0.51 x 0.51 " (13 x 13 mm) 50 to 60 hz resisti v e or ind u cti v e load 0 - 10 f 10 - 100 f > 100 f am b ient temperat u re (c) a v erage for w ard o u tp u t c u rrent (a)
document number 88533 09-oct-06 www.vishay.com 3 b40c800dm thru b380c800dm vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. maximum non-repetitive peak forward surge current per diode figure 4. typical forward characteristics per diode 0 10 100 0 10 20 30 40 50 1.0 cycle nu m b er of cycles at 50 hz peak for w ard s u rge c u rrent (a) t j = 125 c 10 ms single sine- w a v e 0.4 0. 8 1.2 10 1 0.1 0.01 0.6 1.0 1.4 t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard s u rge c u rrent (a) figure 5. typical reverse leak age characteristics per diode figure 6. typical junction capacitance per diode 0 20 40 60 8 0 100 0.01 0.1 1 10 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 25 c 1 10 100 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 0.315 ( 8 .00) 0.2 8 5 (7.24) 0.013 (3.3) 0.00 8 6 (0.22) 0.350 ( 8 .9) 0.300 (7.6) 0.255 (6.5) 0.245 (6.2) 0.335 ( 8 .51) 0.320 ( 8 .12) 0.045 (1.14) 0.035 (0. 8 9) 0.0 8 0 (2.03) 0.050 (1.27) 0.023 (0.5 8 ) 0.01 8 (0.46) 0.1 8 5 (4.69) 0.150 (3. 8 1) 0.130 (3.3) 0.120 (3.05) 0.075 (1.90) 0.055 (1.39) 0.205 (5.2) 0.195 (5.0) case style dfm
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